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AP80N06H AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AP80N06H product

AP80N06H

MOSFETs - Single

N-ChannelMOSFET60V80ATO-220

The AP80N06H is a 60V, 80A N-Channel MOSFET in a TO-220 package, suitable for power management and switching applications.

Best for

  • PWM control
  • Load switching
  • Power supply regulation

Avoid if

  • Space-constrained designs requiring SMD packages
  • Applications exceeding 60V

Check before use

  • Thermal dissipation requirements
  • Gate drive circuit capability

Key specifications

Vdss
60 V
Id
80 A
Rds(on)
7.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementPWM Control

Datasheet

4f86d2abad4dcc9b177c8abb7caca885_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-AP80N06H_C5443667.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AP80N06H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AP80N06H is an N-Channel Enhancement Mode MOSFET designed for high-current power applications, featuring low on-resistance and fast switching characteristics.