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APG011N04G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

APG011N04G product

APG011N04G

MOSFETs - Single

N-ChannelMOSFET40V200A

The APG011N04G is a 40V, 200A N-Channel MOSFET in a PDFN5X6 package, utilizing Split Gate Trench technology for low RDS(on).

Best for

  • PWM applications
  • Load switching
  • Power management

Avoid if

  • Applications requiring higher than 40V breakdown voltage.

Check before use

  • Thermal dissipation capabilities of the PCB layout.

Key specifications

Vdss
40 V
Id
200 A
RDS(on)
0.9 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementLoad Switching

Datasheet

1d2c95d09a9fe3fbe412912cf89a08ea_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-APG011N04G_C5443655.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for APG011N04G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency power switching applications.