APG038N01G Datasheet, Specs, Alternatives & ECAD | ALLPOWER | PartGenie

AI summary

APG038N01G product

The APG038N01G is a high-performance 100V N-Channel MOSFET utilizing Split Gate Trench technology, optimized for power management and switching applications.

Best for

PWM applications
Load switching
Power management systems

Avoid if

Applications requiring extremely low gate drive voltages below 3V

Check before use

Thermal dissipation requirements at high current

Key specifications

VDS: 100 V
ID: 104 A
RDS(on): 3.8 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementIndustrial

Datasheet

e84f02f7b8ee94054be3a2b29e8fddae_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-APG038N01G_C5443671.pdf

800 KB

CAD Models

Download ECAD models for APG038N01G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency power switching, featuring low RDS(ON) and gate charge.