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APG068N04G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

APG068N04G product

APG068N04G

MOSFETs - Single

N-Channel40V50APDFN5X6-8LMOSFET

The APG068N04G is a 40V, 50A N-Channel MOSFET in a PDFN5X6-8L package, optimized for high-efficiency power management and PWM applications.

Best for

  • PWM applications
  • Load switching
  • General power management

Avoid if

  • Applications requiring higher than 40V drain-source voltage

Check before use

  • Thermal design for high-current operation

Key specifications

VDS
40 V
ID
50 A
RDS(on)
5.7 mΩ (typ)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementPWM Control

Datasheet

df0c0ae42f64c24e6ea61b3b83b2cd07_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-APG068N04G_C5443651.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for APG068N04G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET from ALLPOWER, utilizing Split Gate Trench Technology for improved performance in power switching.