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APG068N04Q AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

APG068N04Q product

APG068N04Q

MOSFETs - Single

N-ChannelMOSFET40VPDFN3*3-8L

The APG068N04Q is a 40V, 54A N-Channel MOSFET in a compact PDFN3*3-8L package, optimized for efficient power switching and management.

Best for

  • PWM control
  • Load switching
  • Power management

Avoid if

  • Applications requiring higher voltage ratings (>40V) or through-hole mounting.

Check before use

  • Gate drive voltage levels and thermal dissipation requirements.

Key specifications

Vdss
40 V
Id
54 A
RDS(on)
6.8 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Switching

Datasheet

653ed9df0ad554e8def670c306f630b0_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-APG068N04Q_C5443648.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for APG068N04Q: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET featuring a 40V drain-source breakdown voltage and a 54A continuous drain current rating.