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APG070N12G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

APG070N12G product

APG070N12G

MOSFETs - Single

MOSFETN-Channel120VPDFN5x6

The APG070N12G is a 120V, 90A N-Channel MOSFET in a PDFN5x6 package, designed for high-efficiency power management and switching applications.

Best for

  • PWM control
  • Load switching
  • Power management

Avoid if

  • Applications requiring through-hole mounting
  • Extremely space-constrained designs smaller than 5x6mm

Check before use

  • Thermal dissipation requirements
  • Gate drive capability

Key specifications

VDS
120 V
ID
90 A
RDS(on)
6.0 mΩ

Compliance & Environment

RoHS
Lead free
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Switching

Datasheet

04bcfa55e4cdcf2e035834dc34e21abe_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-APG070N12G_C5443658.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for APG070N12G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET utilizing split gate trench technology, optimized for low on-resistance and low gate charge.