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APG077N01G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

APG077N01G product

APG077N01G

MOSFETs - Single

N-ChannelMOSFET100VPower

The APG077N01G is a 100V, 90A N-Channel MOSFET in a PDFN5*6-8L package, optimized for high-efficiency power switching and management.

Best for

  • PWM controllers
  • Load switching
  • DC-DC converters

Avoid if

  • Applications requiring through-hole mounting
  • Extremely low-voltage logic level switching without adequate gate drive

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vdss
100 V
Id
90 A
RDS(on)
6.2 mΩ (typ)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Switching

Datasheet

422f4f4689b9ec6a8c5d34724d241617_2202132000_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-APG077N01G_C2840980.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for APG077N01G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for power management and switching applications, featuring split gate trench technology.