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APG095N01 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

APG095N01 product

APG095N01

MOSFETs - Single

MOSFETN-Channel100VTO-220C

The APG095N01 is a 100V, 70A N-Channel MOSFET in a TO-220C package, designed for high-efficiency power switching and management.

Best for

  • PWM applications
  • Load switching
  • General power management

Avoid if

  • Space-constrained designs requiring SMD packages
  • Applications exceeding 100V

Check before use

  • Thermal dissipation requirements
  • Gate drive compatibility

Key specifications

VDS
100 V
ID
70 A
RDS(on)
9.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

8f1ec411d721fa1a0ed038277ad3413e_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-APG095N01_C5443736.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for APG095N01: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The APG095N01 is an N-Channel enhancement mode MOSFET utilizing Split Gate Trench Technology, optimized for low RDS(ON) and low gate charge.