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ASA65R550E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ASA65R550E product

ASA65R550E

FETs

MOSFET700VN-Channel

The ASA65R550E is a 700V N-Channel MOSFET from ANHI, optimized for high-efficiency power conversion applications like PFC and flyback converters.

Best for

  • Boost PFC
  • Flyback converters
  • LED lighting

Avoid if

  • Applications requiring extremely low RDS(on) or surface-mount assembly (this is a through-hole TO-220F part).

Check before use

  • Thermal design for the TO-220F package
  • Gate drive circuit compatibility

Key specifications

VDS
700 V
ID
8 A
RDS(on)
550 mΩ

Compliance & Environment

RoHS
RoHS
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Supply

Datasheet

68d54922a63788174f8abf7e9759c224_2303271030_ANHI-ASA65R550E_C5440003.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ASA65R550E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon N-Channel MOSFET designed for high-voltage power applications, featuring a 700V breakdown voltage and 550mΩ on-resistance.