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ASA70R240E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ASA70R240E product

ASA70R240E

FETs

MOSFETN-Channel750VPower Management

The ASA70R240E is a 750V, 20A N-Channel enhancement mode MOSFET from ANHI, optimized for high-efficiency power conversion applications like flyback and forward topologies.

Best for

  • Flyback power supplies
  • Two-transistor forward topologies
  • LED lighting drivers

Avoid if

  • Applications requiring extremely low gate charge for ultra-high frequency switching
  • Designs where space constraints prohibit the use of a TO-220F package

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Drain-Source Voltage
750 V
Continuous Drain Current
20 A
On-Resistance
240 mΩ
Total Gate Charge
32.23 nC

Compliance & Environment

RoHS
RoHS
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesLED Lighting

Datasheet

967a6b8a2dd8fbaed56e91e57bce9d70_2303271030_ANHI-ASA70R240E_C5440042.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ASA70R240E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The ASA70R240E is a silicon N-Channel enhancement mode MOSFET designed for high-voltage power applications, featuring a 750V drain-source breakdown voltage and a low on-resistance of 240mΩ.