ProjectsPricingInsights

ASB65R220E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ASB65R220E product

ASB65R220E

FETs

MOSFET650VPower Switch

The ASB65R220E is a 650V, 20A N-Channel MOSFET from ANHI Semiconductor, optimized for high-efficiency power conversion applications.

Best for

  • Power supply design
  • PFC stages
  • Industrial power conversion

Avoid if

  • Low-voltage battery-powered applications
  • Space-constrained designs requiring smaller packages

Check before use

  • Thermal resistance (RthJC = 0.99°C/W)
  • Gate drive voltage levels

Key specifications

VDS
650V
ID
20A
RDS(on)
220mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

cfc22c1139cfbda70706e3df31867687_2309251426_ANHI-ASB65R220E_C18199767.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ASB65R220E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage N-Channel MOSFET designed for power switching applications, featuring a 650V breakdown voltage and 20A continuous current capability.