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ASB65R300E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ASB65R300E product

ASB65R300E

FETs

MOSFETN-Channel700VPower

The ASB65R300E is a 700V, 15A N-Channel MOSFET from ANHI, optimized for high-efficiency power conversion applications.

Best for

  • Boost PFC
  • Flyback converters
  • LLC resonant converters
  • Server power supplies

Avoid if

  • Low-voltage battery-powered applications where lower RDS(on) or lower gate charge is critical.

Check before use

  • Thermal design for the TO-263 package
  • Gate drive voltage levels

Key specifications

VDS
700 V
ID
15 A
RDS(on)
300 mΩ

Compliance & Environment

RoHS
RoHS
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyIndustrial

Datasheet

a74ba8fa26db88e1f8a5801170fa1b1e_2303271030_ANHI-ASB65R300E_C5440008.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ASB65R300E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon N-Channel MOSFET designed for high-voltage power applications, featuring a 700V breakdown voltage and 300mΩ on-resistance.