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ASB80R750E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ASB80R750E product

ASB80R750E

MOSFETs - Single

MOSFETN-Channel850VPower

The ASB80R750E is an 850V N-Channel MOSFET in a TO-263 package, optimized for high-efficiency power conversion applications.

Best for

  • Flyback converters
  • Forward converters
  • LED lighting power supplies

Avoid if

  • Applications requiring extremely low RDS(on) or very high current handling beyond 8.5A.

Check before use

  • Thermal resistance (RthJC) and PCB layout for heat dissipation.

Key specifications

VDS
850 V
ID
8.5 A
RDS(on)
750 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesLED Lighting

Datasheet

5c02eed49a9fa556364f5d4672b86b4f_2403122130_ANHI-ASB80R750E_C18723002.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ASB80R750E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement-mode MOSFET from ANHI Semiconductor, rated for 850V and 8.5A.