AUD069N10A Datasheet, Specs, Alternatives & ECAD | ANHI Semiconductor | PartGenie

AI summary

AUD069N10A product

The AUD069N10A is a high-performance 100V N-Channel MOSFET in a TO-252 package, optimized for high-speed switching and power conversion.

Best for

SMPS
DC/DC conversion
Industrial power supplies

Avoid if

Applications requiring extremely low gate charge or very small form factors

Check before use

Thermal design
Gate drive voltage

Key specifications

Vdss: 100 V
Id: 116 A
Rds(on): 5.9 mΩ

Compliance & Environment

RoHS: RoHS
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

PowerIndustrial

Datasheet

706a9d93bf926348e57a017d349350bc_2311161804_ANHI-AUD069N10A_C19192890.pdf

800 KB

CAD Models

Download ECAD models for AUD069N10A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Silicon MOSFET with a 100V drain-source breakdown voltage, capable of handling up to 116A of continuous drain current.