ProjectsPricingInsights

AUN063N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AUN063N10 product

AUN063N10

FETs

MOSFETN-Channel100VPower

The AUN063N10 is a 100V, 123A N-Channel MOSFET in a DFN5X6 package, optimized for high-efficiency power conversion.

Best for

  • Flyback converters
  • Forward topologies
  • PC power supplies

Avoid if

  • Low-power, space-constrained applications where smaller packages are required.

Check before use

  • Thermal resistance (RthJC = 1.3 °C/W) and PCB layout for heat dissipation.

Key specifications

VDS
100 V
ID
123 A
RDS(on)
6.3 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesLED Lighting

Datasheet

ca7dbdd05b6329227f8db2f72c323119_2303271030_ANHI-AUN063N10_C5440031.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AUN063N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon N-Channel enhancement mode MOSFET from ANHI Semiconductor, designed for high-power applications.