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AUP065N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AUP065N10 product

AUP065N10

MOSFETs - Single

N-ChannelMOSFET100VTO-220

The AUP065N10 is a 100V, 76A N-Channel MOSFET from ANHI Semiconductor, designed for high-efficiency power applications in a TO-220 package.

Best for

  • Synchronous rectification
  • Power management systems
  • Load switching

Avoid if

  • Space-constrained designs requiring SMD packages (use DFN5x6 version AUN065N10 instead).

Check before use

  • Gate drive voltage levels
  • Heatsink requirements for high-current operation

Key specifications

VDS
100 V
ID
76 A
RDS(on)
6.5 mΩ

Compliance & Environment

RoHS
RoHS
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

88eb18474b4fa5277dc1fc49e694d7a5_2310191804_ANHI-AUP065N10_C18722995.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AUP065N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AUP065N10 is an N-Channel silicon MOSFET utilizing trench technology, optimized for low gate charge and fast switching.