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BCD90N03 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BCD90N03 product

BCD90N03

MOSFETs - Single

N-ChannelMOSFET30V90ATO-252

The BCD90N03 is a 30V, 90A N-channel power MOSFET utilizing advanced trench technology, designed for efficient power switching in TO-252 packages.

Best for

  • Load switching
  • PWM control
  • Power management

Avoid if

  • Applications requiring voltages above 30V
  • Extremely space-constrained designs where DPAK is too large

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDSS
30 V
ID
90 A
RDS(ON) (max)
4.5 mΩ

Compliance & Environment

RoHS
RoHS
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementPWM Control

Datasheet

79584dae38486c73b431fe553c7e8215_2207211800_baocheng-Shandong-Baocheng-Elec-BCD90N03_C3874040.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BCD90N03: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode power MOSFET rated for 30V and 90A, optimized for low RDS(ON) and low gate charge.