What are the key specifications of the BD238G?

It features a collector-emitter breakdown voltage of -80V, a collector current of -2A, and a power dissipation rating of 1.25W.

What is the pinout of BD238G?

Use the BD238G datasheet for the official pinout diagram and pin names. In PartGenie, ask Datasheet AI about BD238G pinout to locate pins, power rails, and interface signals before layout.

BD238G Datasheet, Specs, Alternatives & ECAD | UTC

AI summary

The BD238G is a -80V, 2A PNP BJT transistor in a TO-126 package, optimized for high-gain, high-voltage applications.

Best for

General purpose switching
Amplification circuits

Avoid if

Applications requiring high-frequency performance above 3 MHz

Check before use

Thermal dissipation requirements
Pin assignment

Key specifications

VCEO: -80 V
IC: -2 A
Package: TO-126

Application

General PurposePower Switching

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BD238G is a PNP epitaxial planar silicon transistor manufactured by UTC, designed for high-voltage and high-gain applications.