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BFP 650F H6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFP 650F H6327 product

BFP 650F H6327

Transistors - Bipolar (BJT) - RF

SiGe:CRF TransistorNPNLow Noise

The BFP650F is a high-performance SiGe:C NPN RF transistor optimized for low-noise and high-linearity applications up to 42 GHz.

Best for

  • RF amplification
  • Oscillators
  • CATV systems

Avoid if

  • High-power switching applications

Check before use

  • ESD handling precautions
  • Bias conditions

Key specifications

fT
42 GHz
NFmin
0.8 dB
OIP3
31 dBm

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

ConnectivityGeneral

Datasheet

2c0a6c3487493855e227c3da5b8d3926_Infineon(英飞凌)&BFP 650F H6327.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFP 650F H6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a sixth-generation SiGe:C silicon NPN RF bipolar transistor designed for high-linearity and low-noise applications.