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BFP193WH6327XTSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFP193WH6327XTSA1 product

BFP193WH6327XTSA1

Transistors - Bipolar (BJT) - RF

RF TransistorNPNLow Noise

The BFP193W is a high-performance NPN RF transistor optimized for low-noise, high-gain broadband amplification up to 2 GHz.

Best for

  • RF broadband amplifiers
  • Low-noise signal amplification

Avoid if

  • Applications requiring frequencies significantly above 2 GHz
  • High-power switching applications

Check before use

  • ESD handling protocols
  • Thermal management at high power dissipation

Key specifications

Transition Frequency
8 GHz
Noise Figure
1 dB @ 900 MHz
Collector Current
80 mA

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplifiers

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFP193WH6327XTSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BFP193W is a silicon bipolar RF transistor designed for low-noise, high-gain linear broadband amplifiers operating at frequencies up to 2 GHz.