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BFP196E6327HTSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFP196E6327HTSA1 product

BFP196E6327HTSA1

Transistors - Bipolar (BJT) - RF

RF TransistorNPNLow NoiseBroadband

The BFP196 is a high-performance NPN silicon bipolar RF transistor optimized for low-noise, low-distortion broadband amplification in telecommunications systems up to 1.5 GHz.

Best for

  • DECT and PCN system power amplifiers
  • Broadband RF signal amplification

Avoid if

  • Applications requiring frequencies significantly above 1.5 GHz
  • High-power output stages exceeding 700 mW dissipation

Check before use

  • ESD handling protocols
  • Thermal management at the soldering point

Key specifications

Transition Frequency
7.5 GHz
Noise Figure
1.3 dB @ 900 MHz
Collector Current
150 mA

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

TelecommunicationsRF Amplification

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFP196E6327HTSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BFP196 is an NPN silicon bipolar RF transistor from Infineon, specifically engineered for low-noise and low-distortion applications in antenna and telecommunications systems.