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BFP640ESDH6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFP640ESDH6327 product

BFP640ESDH6327

Transistors - Bipolar (BJT) - RF

RF TransistorSiGe:CLNA

The BFP640ESD is a robust SiGe:C NPN RF transistor optimized for low-noise amplification in wireless applications.

Best for

  • Low-noise amplification
  • Wireless RF front-ends

Avoid if

  • High-power switching applications

Check before use

  • ESD handling precautions
  • RF matching network design

Key specifications

Noise Figure
0.8 dB
Gain
19 dB
ESD Robustness
2 kV (HBM)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

ConnectivityConsumer

Datasheet

db8b0afae26da3e8b408a78a595e6f86_2305101756_Infineon-Technologies-BFP640ESDH6327XTSA1_C672126.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFP640ESDH6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a sixth-generation silicon-germanium carbon (SiGe:C) NPN RF bipolar transistor designed for high-frequency wireless applications.