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BFP640H6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFP640H6327 product

BFP640H6327

Transistors - Bipolar (BJT) - RF

RF TransistorSiGeLNA

The BFP640 is a high-linearity SiGe:C NPN RF transistor designed for low-noise amplification in high-frequency applications up to 8 GHz.

Best for

  • Low-noise amplification
  • High-linearity RF designs

Avoid if

  • High-power switching applications

Check before use

  • ESD handling precautions

Key specifications

Transition Frequency
42 GHz
Noise Figure
0.65 dB
Gain
24 dB

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

ConnectivityConsumer

Datasheet

76cc5524f441534e7c743e5cbaba58c5.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFP640H6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BFP640 is a sixth-generation silicon-germanium (SiGe:C) NPN RF bipolar transistor optimized for high linearity and energy efficiency.