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BFP650H6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFP650H6327 product

BFP650H6327

Transistors - Bipolar (BJT) - RF

RF TransistorSiGeNPN

The BFP650 is a high-performance SiGe:C NPN RF transistor optimized for high linearity and low noise in wideband applications up to 5 GHz.

Best for

  • RF front-end driver amplifiers
  • Active antenna output stages

Avoid if

  • Applications requiring frequencies significantly above 5 GHz

Check before use

  • Bias conditions for optimal linearity vs. power consumption

Key specifications

fT
42 GHz
VCEO
4 V
IC
150 mA

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

ConnectivityGeneral RF

Datasheet

88e42ac09a4020d7e1ae2585bdf3431c_1810141020_Infineon-Technologies-BFP650H6327_C151520.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFP650H6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BFP650 is a high-linearity wideband NPN bipolar RF transistor utilizing Infineon's SiGe:C heterojunction technology.