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BFP740FESDH6327XTSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFP740FESDH6327XTSA1 product

BFP740FESDH6327XTSA1

Transistors - Bipolar (BJT) - RF

RF TransistorSiGeNPNInfineon

The BFP740FESD is a high-performance SiGe:C NPN RF transistor with integrated ESD protection, ideal for wireless and satellite communication applications.

Best for

  • Wireless communication front-ends
  • GNSS receivers
  • Satellite LNBs

Avoid if

  • Applications requiring high power output beyond 21 dBm

Check before use

  • PCB layout for RF performance
  • Bias-T configuration

Key specifications

Transition Frequency
47 GHz
Noise Figure (2.4 GHz)
0.6 dB
Max RF Input Power
21 dBm
ESD Robustness (HBM)
2 kV

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Wireless ConnectivitySatellite Systems

Datasheet

International-Rectifier-company-55.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFP740FESDH6327XTSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a wideband NPN RF heterojunction bipolar transistor (HBT) manufactured by Infineon, utilizing SiGe:C technology and featuring integrated ESD protection.