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BFP740FH6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFP740FH6327 product

BFP740FH6327

Transistors - Bipolar (BJT) - RF

SiGeRF TransistorLow NoiseInfineon

The BFP740F is a high-performance SiGe:C NPN RF transistor optimized for low-noise, wideband applications up to 10 GHz.

Best for

  • Low noise amplifiers (LNA)
  • VCOs
  • Buffer amplifiers

Avoid if

  • High power output requirements exceeding 45 mA collector current

Check before use

  • Thermal dissipation limits at high ambient temperatures

Key specifications

fT
45 GHz
NFmin
1.0 dB @ 5.5 GHz
Gms
21 dB @ 5.5 GHz
VCEO
4 V

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

ConnectivityGeneral RF

Datasheet

e28d7eb856fcbd908c7deb4b710ecc54_1810170417_Infineon-Technologies-BFP740FH6327_C152652.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFP740FH6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a linear, very low noise wideband NPN bipolar RF transistor based on Silicon Germanium Carbon (SiGe:C) technology.