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BFP840FESDH6327XTSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFP840FESDH6327XTSA1 product

BFP840FESDH6327XTSA1

Transistors - Bipolar (BJT) - RF

RF TransistorSiGeNPN5 GHz

The BFP840FESD is a high-performance SiGe:C NPN RF transistor with integrated ESD protection, ideal for 5 GHz band applications like WLAN and satellite navigation.

Best for

  • WLAN
  • WiMAX
  • UWB
  • Satellite navigation systems

Avoid if

  • Applications requiring high power handling beyond 20 dBm

Check before use

  • ESD handling precautions
  • PCB layout for high-frequency performance

Key specifications

Transition Frequency
85 GHz
Noise Figure
0.75 dB
Gain
23 dB

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

ConnectivityGeneral RF

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFP840FESDH6327XTSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a discrete RF heterojunction bipolar transistor (HBT) using SiGe:C technology, featuring integrated ESD protection.