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BFR182E6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFR182E6327 product

BFR182E6327

Transistors - Bipolar (BJT) - RF

RF TransistorBipolarLow Noise

The BFR182 is a high-performance silicon bipolar RF transistor designed for low-noise, high-gain broadband amplification.

Best for

  • Broadband RF amplifiers
  • Low-noise signal amplification

Avoid if

  • High-power switching applications
  • Applications requiring > 35 mA collector current

Check before use

  • ESD protection measures
  • Thermal dissipation at the soldering point

Key specifications

fT
8 GHz
NFmin
0.9 dB
VCEO
12 V

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplifiers

Datasheet

CAD Models

Download ECAD models for BFR182E6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BFR182 is a low-noise silicon bipolar RF transistor optimized for broadband amplifier circuits operating at collector currents between 1 mA and 20 mA.