ProjectsPricingInsights

BFR193E6327HTSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFR193E6327HTSA1 product

BFR193E6327HTSA1

Transistors - Bipolar (BJT) - RF

RF TransistorNPNLow Noise

The BFR193 is a high-performance NPN silicon bipolar RF transistor optimized for low-noise, high-gain amplification in applications up to 2 GHz.

Best for

  • RF front-end amplifiers
  • Broadband signal amplification

Avoid if

  • High-power switching applications exceeding 80 mA or 12 V

Check before use

  • ESD handling protocols
  • Thermal dissipation at high ambient temperatures

Key specifications

fT
8 GHz
NFmin
1 dB
VCEO
12 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

ConnectivityGeneral RF

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFR193E6327HTSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BFR193 is a low-noise silicon bipolar RF transistor designed for linear broadband and high-gain amplifier applications up to 2 GHz.