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BFR193WH6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFR193WH6327 product

BFR193WH6327

Transistors - Bipolar (BJT) - RF

RF TransistorNPNLow Noise

The BFR193W is a high-performance NPN RF transistor designed for low-noise, high-gain amplification in broadband circuits up to 2 GHz.

Best for

  • RF broadband amplifiers
  • Low-noise front-end stages

Avoid if

  • Applications requiring frequencies significantly above 2 GHz

Check before use

  • Thermal dissipation limits at high ambient temperatures

Key specifications

fT
8 GHz
NFmin
1 dB
VCEO
12 V

Compliance & Environment

RoHS
Not applicable
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Connectivity

Datasheet

c64c3cf488fdffb0c005e248e0358278_2304140030_Infineon-Technologies-BFR193WH6327_C152683.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFR193WH6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a low-noise silicon bipolar RF transistor optimized for linear broadband amplifiers and high-gain applications up to 2 GHz.