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BFU550XAR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFU550XAR product

BFU550XAR

Discrete Semiconductor Products

RF TransistorNPNWidebandLow Noise

The BFU550XAR is a high-performance NPN wideband silicon RF transistor optimized for low-noise, high-speed applications up to 2 GHz.

Best for

  • Broadband RF amplifiers
  • ISM band oscillators
  • Low-noise front-end stages

Avoid if

  • High-power applications exceeding 450 mW dissipation

Check before use

  • Ensure the SOT143B footprint is compatible with your assembly process

Key specifications

fT
11 GHz
Noise Figure
0.75 dB @ 900 MHz
Max Gain
21.5 dB @ 900 MHz
VCEO
12 V

Compliance & Environment

RoHS
Y
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541210075.0

Application

ConnectivityIndustrial

Datasheet

NXP-Semiconductors-company-13.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFU550XAR: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN wideband silicon RF transistor designed for high-speed, low-noise applications, particularly in the ISM band up to 2 GHz.