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BFU580Q AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFU580Q product

BFU580Q

Transistors

NPNMicrowaveRF Transistor

The BFU580Q is a high-performance NPN silicon epitaxial transistor optimized for microwave low-noise amplification.

Best for

  • CATV amplifiers
  • Wireless transceiver modules
  • High-frequency signal amplification

Avoid if

  • Applications requiring extremely low power consumption or non-RF signal processing

Check before use

  • Thermal dissipation requirements in high-power RF modes

Key specifications

VCEO
12 V
fT
8.5 GHz
PC
1000 mW

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplification

Datasheet

7df7f4a3147091c20018c1ac2094055f_2308091126_Slkor-SLKORMICRO-Elec--BFU580Q_C7496600.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFU580Q: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon epitaxial transistor designed for microwave low-noise amplifier applications.