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BFU590H AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFU590H product

BFU590H

Transistors - Bipolar (BJT) - RF

RF TransistorNPNWideband

The BFU590H is a high-performance NPN RF transistor designed for wideband, low-noise power amplification in microwave and wireless applications.

Best for

  • RF power amplification
  • Wideband low-noise circuits

Avoid if

  • Low-power or non-RF applications where standard general-purpose transistors suffice

Check before use

  • Thermal dissipation layout
  • RF matching network design

Key specifications

fT
8.5 GHz
PT
2W
VCEO
15V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF AmplificationWireless Modules

CAD Models

Download ECAD models for BFU590H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BFU590H is a silicon epitaxial NPN transistor optimized for high-frequency, wideband, and low-noise RF power amplification.