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BFU660F,115 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFU660F,115 product

BFU660F,115

Bipolar (BJT)

RF TransistorNPNMicrowave

The BFU660F is a high-performance NPN RF transistor optimized for low-noise, high-linearity applications in the microwave frequency range.

Best for

  • ZigBee
  • LTE/UMTS
  • X-band buffer amplifiers

Avoid if

  • High-power switching applications

Check before use

  • ESD protection measures

Key specifications

fT
40 GHz
Noise Figure
0.65 dB
VCEO
5.5 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

ConnectivityGeneral RF

Datasheet

DSASFU100010380.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFU660F,115: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BFU660F is an NPN wideband silicon microwave transistor designed for high-speed, low-noise RF applications.