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BFU730F,115 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BFU730F,115 product

BFU730F,115

Programmers

RF TransistorSiGeLow Noise

The BFU730F is a high-performance NPN SiGe RF transistor optimized for low-noise, high-gain microwave applications up to 12 GHz.

Best for

  • Low-noise amplification
  • Microwave communications
  • Battery-powered RF devices

Avoid if

  • High-voltage applications
  • Non-RF general purpose switching

Check before use

  • ESD handling precautions
  • Bias voltage limits

Key specifications

fT
110 GHz
Noise Figure
0.8 dB @ 5.8 GHz
Max Power Gain
18.5 dB @ 5.8 GHz

Compliance & Environment

RoHS
Y
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541210075.0

Application

ConnectivityConsumer

Datasheet

SATO-S-A0002255435-1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BFU730F,115: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BFU730F is an NPN wideband silicon germanium (SiGe) RF transistor designed for high-speed, low-noise microwave applications.