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BGA 5H1BN6 E6327 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BGA 5H1BN6 E6327 product

BGA 5H1BN6 E6327

RF Amplifiers

LNALTEInfineonRF

The BGA5H1BN6 is a high-performance SiGe LNA optimized for LTE highband (2300-2690 MHz) with integrated bypass functionality.

Best for

  • LTE highband RF front-ends
  • Mobile devices requiring high dynamic range

Avoid if

  • Applications outside the 2300-2690 MHz range

Check before use

  • Supply voltage stability
  • Input matching network design

Key specifications

Gain
18.1 dB
Noise Figure
0.7 dB
Frequency
2300-2690 MHz

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Connectivity

Datasheet

918f99d78d7575ed0a2fff1dc5f870ee_Infineon(英飞凌)&BGA 5H1BN6 E6327.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BGA 5H1BN6 E6327: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a front-end low noise amplifier (LNA) for LTE highband applications, utilizing Infineon's B9HF Silicon Germanium technology.