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BL3N150-B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BL3N150-B product

BL3N150-B

MOSFETs - Single

MOSFET1500VPower

The BL3N150-B is a high-voltage 1500V N-channel power MOSFET designed for efficient switching in power supply applications.

Best for

  • High-frequency SMPS
  • General purpose switching

Avoid if

  • Low-voltage applications where lower RDS(ON) is required

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
1500 V
ID
3 A
RDS(ON)
5.8 Ohm

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Supply

Datasheet

ee1fa90d990f77cfc899b48328742f05_2307121103_BL-Shanghai-Belling-BL3N150-B_C7436531.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BL3N150-B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1500V, 3A N-channel enhancement-mode power MOSFET from Shanghai Belling, optimized for high-frequency switching.