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BLM04N06-B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BLM04N06-B product

BLM04N06-B

MOSFETs - Single

N-ChannelMOSFET60VPower

The BLM04N06-B is a high-performance 60V N-Channel MOSFET designed for power-intensive applications requiring low on-resistance and high current handling.

Best for

  • Power switching
  • UPS
  • High frequency circuits

Avoid if

  • Low-power, space-constrained designs where smaller packages are required.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDS
60 V
ID
150 A
RDS(ON)
< 4.2 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

33652cae65c72549c49ade96352dbdbc_2201121300_BL-Shanghai-Belling-BLM04N06-B_C2924860.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BLM04N06-B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 60V N-Channel Power MOSFET from Shanghai Belling, utilizing advanced trench technology for efficient power switching.