BN5C4R51V160 Datasheet, Specs, Alternatives & ECAD | BORN | PartGenie

AI summary

BN5C4R51V160 product

The BN5C4R51V160 is a high-power bidirectional TVS diode in a compact DFN1610 package, designed for robust ESD and surge protection in portable electronics.

Best for

Power line protection
General ESD protection

Avoid if

High-speed data lines requiring low capacitance

Check before use

Capacitance impact on signal integrity

Key specifications

Peak Pulse Power: 2700 W
Clamping Voltage: 18 V
Capacitance: 320 pF

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Portable ElectronicsPower Lines

Datasheet

feee5e9750928589fe77ad3796bb0b44_2310241354_BORN-BN5C4R51V160_C19078057.pdf

800 KB

CAD Models

Download ECAD models for BN5C4R51V160: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a bidirectional ESD protection diode using silicon-avalanche technology, capable of handling 2700W peak pulse power.