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BRMMDT2227WS AI Analysis:
Datasheet, Specs, Alternatives & ECAD

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BRMMDT2227WS product

BRMMDT2227WS

Transistors - Bipolar (BJT) - Arrays

Dual TransistorNPN+PNPSOT-363

The BRMMDT2227WS is a dual NPN+PNP transistor array in a SOT-363 package, suitable for low-power amplification and switching.

Best for

  • Low power amplification
  • Switching circuits

Avoid if

  • High power applications exceeding 200mW total dissipation

Check before use

  • Pinout configuration for NPN and PNP sections

Key specifications

Configuration
NPN + PNP
VCEO (NPN)
40 V
VCEO (PNP)
-60 V
Max Collector Current
600 mA

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposePower

Datasheet

fd8f9faf4de04f6762f6d55d1ccacb8d_2407101646_Foshan-Blue-Rocket-Elec-BRMMDT2227WS_C22435003.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BRMMDT2227WS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual-transistor device featuring one NPN and one PNP silicon transistor housed in a single SOT-363 surface-mount package.