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BSC030P03NS3G-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSC030P03NS3G-HXY product

BSC030P03NS3G-HXY

MOSFETs - Single

MOSFETP-Channel30VPower

The BSC030P03NS3G is a -30V P-Channel MOSFET in a DFN5X6-8L package, designed for high-current switching applications like battery protection.

Best for

  • Battery management systems
  • Power switching

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs without thermal dissipation

Check before use

  • Thermal resistance (RθJC)
  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-100 A
RDS(ON)
4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

603663afa8f0ed10ef5a3e25a851c125_2403261740_HXY-MOSFET-BSC030P03NS3G-HXY_C22367086.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSC030P03NS3G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for low RDS(ON) and efficient switching.