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BSC042NE7NS3GATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSC042NE7NS3GATMA1 product

BSC042NE7NS3GATMA1

MOSFETs - Single

N-Channel75VPower MOSFETOptiMOS

The BSC042NE7NS3 G is a 75V N-channel power MOSFET in a PG-TDSON-8 package, optimized for high-efficiency DC/DC conversion and synchronous rectification.

Best for

  • DC/DC converters
  • Synchronous rectification

Avoid if

  • Low-power applications where smaller packages are preferred

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
75 V
ID
132 A
RDS(on)
4.2 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSC042NE7NS3GATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power MOSFET from Infineon, rated for 75V and 132A, designed for high-frequency power applications.