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BSC060P03NS3EGATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSC060P03NS3EGATMA1 product

BSC060P03NS3EGATMA1

MOSFETs - Single

P-ChannelMOSFETOptiMOS

The BSC060P03NS3E G is a high-performance -30V P-Channel MOSFET in a PG-TDSON-8 package, ideal for battery management and load switching.

Best for

  • Battery management
  • Load switching

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs without thermal dissipation

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
-30 V
ID
-100 A
RDS(on)
6.0 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSC060P03NS3EGATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS P3 P-Channel MOSFET designed for power management, featuring low on-resistance and high current handling.