BSC066N06NS-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

BSC066N06NS-HXY product

The BSC066N06NS is a 60V, 80A N-Channel MOSFET in a DFN5x6-8L package, optimized for high-efficiency switching in battery protection and power management.

Best for

Battery protection
Load switching
UPS

Avoid if

Applications requiring extremely low gate drive voltages below 4.5V

Check before use

Thermal design
Gate drive circuit compatibility

Key specifications

VDS: 60 V
ID: 80 A
RDS(on): 7 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementIndustrial

Datasheet

7d4640305082ec2044a721b8e84cb47c_2308221404_HXY-MOSFET-BSC066N06NS-HXY_C7543018.pdf

800 KB

CAD Models

Download ECAD models for BSC066N06NS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for switching applications, featuring low on-resistance and low gate charge.