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BSC0702LSATMA1-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSC0702LSATMA1-HXY product

BSC0702LSATMA1-HXY

MOSFETs - Single

N-Channel60V125ASGT MOSFET

The BSC0702LSATMA1 is a 60V, 125A N-Channel SGT MOSFET optimized for high-efficiency power switching in a compact DFN5X6-8L package.

Best for

  • Synchronous rectification
  • Motor control
  • Power supplies

Avoid if

  • Applications requiring voltage ratings significantly above 60V

Check before use

  • Thermal dissipation requirements at 125A

Key specifications

VDS
60 V
ID
125 A
RDS(on)
2.9 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyMotor Control

Datasheet

bd0dfebc98c0de762db3efbc9e90956b_2401231634_HXY-MOSFET-BSC0702LSATMA1-HXY_C20606290.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSC0702LSATMA1-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET using Shielded Gate Trench (SGT) technology, designed for low RDS(on) and fast switching.