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BSC076N06NS3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSC076N06NS3 G product

BSC076N06NS3 G

MOSFETs - Single

MOSFETN-Channel60VOptiMOS

The BSC076N06NS3 G is a 60V N-channel OptiMOS 3 power MOSFET in a PG-TDSON-8 package, designed for high-efficiency DC/DC conversion and high-frequency switching.

Best for

  • DC/DC power supplies
  • High-frequency switching circuits

Avoid if

  • Applications requiring extremely low voltage or very high current beyond 50A

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
50 A
RDS(on)
7.6 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

BSC076N06NS3_Rev2.1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSC076N06NS3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET from Infineon's OptiMOS 3 family, featuring a 60V drain-source breakdown voltage and 50A continuous current rating.