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BSC097N06NS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSC097N06NS-HXY product

BSC097N06NS-HXY

FETs

N-ChannelMOSFET60V65A

The BSC097N06NS is a 60V, 65A N-Channel MOSFET in a DFN5X6-8L package, optimized for low RDS(on) and efficient switching.

Best for

  • Battery protection
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements
  • Gate drive circuit compatibility

Key specifications

VDS
60 V
ID
65 A
RDS(on)
11 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

06e83ca1d4541f44603f5e950a60dd21_2401231634_HXY-MOSFET-BSC097N06NS-HXY_C20606225.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSC097N06NS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, designed for high-efficiency switching applications.