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BSC097N06NS AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSC097N06NS product

BSC097N06NS

MOSFETs - Single

MOSFETN-Channel60VOptiMOS

The BSC097N06NS is a 60 V N-channel OptiMOS power MOSFET in a PG-TDSON-8 package, optimized for high-efficiency switching power supplies and synchronous rectification.

Best for

  • Synchronous rectification
  • Switching power supplies (SMPS)

Avoid if

  • Applications requiring higher voltage ratings than 60 V
  • Applications requiring significantly higher continuous current than 46 A

Check before use

  • Thermal design on PCB
  • Gate drive voltage levels

Key specifications

VDS
60 V
RDS(on) max
9.7 mΩ
ID
46 A

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

ad81c138759d3bc19db3e7cd5282d735_2401231634_HXY-MOSFET-BSC097N06NS-HXY_C20606225.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSC097N06NS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The BSC097N06NS is an Infineon OptiMOS power transistor designed for high-performance switching applications, featuring a 60 V drain-source breakdown voltage and low on-resistance.