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BSC105N10LSF G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

BSC105N10LSF G product

BSC105N10LSF G

FETs

MOSFETN-Channel100VOptiMOS

The BSC105N10LSF G is a 100V N-channel logic-level MOSFET in a PG-TDSON-8 package, designed for high-efficiency power conversion.

Best for

  • Synchronous rectification
  • High-frequency DC-DC converters

Avoid if

  • Applications requiring extremely low gate drive voltage below 1.2V

Check before use

  • Thermal design and PCB layout for the PG-TDSON-8 package

Key specifications

VDS
100 V
ID
90 A
RDS(on)
10.5 mΩ

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

c9523462de21593e2c8602221414fb66_Infineon(英飞凌)&BSC105N10LSF G.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for BSC105N10LSF G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 2 N-channel power MOSFET featuring logic-level gate drive and low on-resistance, suitable for high-frequency switching.