BSC120N03MS G-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

BSC120N03MS G-HXY product

The BSC120N03MS G is a 30V N-Channel MOSFET in a DFN5X6-8L package, optimized for high-efficiency switching applications like battery protection and load switches.

Best for

Battery management systems
Load switching

Avoid if

Applications requiring >30V drain-source voltage

Check before use

Thermal dissipation limits at high ambient temperatures

Key specifications

VDS: 30 V
ID: 70 A
RDS(on): 5.7 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementBattery Protection

Datasheet

44d028209f7d1b1bf67ad29098c6de29_HXY MOSFET(华轩阳电子)&BSC120N03MS G-HXY.pdf

800 KB

CAD Models

Download ECAD models for BSC120N03MS G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency power switching, featuring low RDS(on) and low gate charge.